(China (Mainland))
Product Summary
The K40H1203 is an IGBT in 2nd generation trenchstop with soft, fast recovery anti-parallel emcon diode.
Parametrics
K40H1203 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)DC collector current (Tj=150℃)TC = 25℃ IC: 75A; (3)Pulsed collector current, tp limited by Tjmax ICpul: 160A; (4)Turn off safe operating area VCE ≤ 1200V, Tj ≤ 175℃: 160A; (5)Diode pulsed current, tp limited by Tjmax IFpuls: 160 A; (6)Gate-emitter voltage VGE: ±20 V; (7)Short circuit withstand time VGE = 15V, VCC ≤ 600V, Tj,start ≤ 175℃ tSC: 10 μs; (8)Power dissipation TC = 25℃ Ptot: 480 W; (9)Operating junction temperature Tj: -40 to +175℃; (10)Storage temperature Ts tg: -55 to +150℃; (11)Soldering temperature, 1.6mm (0.063 in.)from case for 10s Wavesoldering only, temperature on leads only: 260℃.
Features
K40H1203 features: (1)Best in class TO247; (2)Short circuit withstand time – 10μs; (3)Designed for : Frequency Converters, Uninterrupted Power Supply; (4)TrenchStop 2nd generation for 1200 V applications offers : very tight parameter distribution, high ruggedness, temperature stable behavior; (5)Easy paralleling capability due to positive temperature coefficient in VCE(sat); (6)Low EMI; (7)Low Gate Charge; (8)Very soft, fast recovery anti-parallel EmCon HE diode; (9)Qualified according to JEDEC1 for target applications; (10)Pb-free lead plating; RoHS compliant.
Diagrams
