Product Summary

The FS75R12KE3 is an IGBT Module.

Parametrics

FS75R12KE3 absolute maximum ratings: (1)collector-emitter voltage: 1200V; (2)DC-collector current: 105A/75A; (3)repetitive peak collector current: 150A; (4)total power dissipation: 350W; (5)gate-emitter peak voltage: ±20V; (6) DC forward current: 75A; (7) repetitive peak forward current: 150A; (8) insulation test voltage: 2.5kV.

Diagrams

FS75R12KE3 forward caracteristic of inverse diode

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FS75R12KE3
FS75R12KE3
Infineon Technologies
IGBT Modules 1200V 75A 3-PHASE
Data Sheet
0-1: $80.08
1-10: $72.07
FS75R12KE3_B3
FS75R12KE3_B3
Infineon Technologies
IGBT Modules N-CH 1.2KV 100A
Data Sheet
0-6: $143.86
6-10: $129.46
FS75R12KE3G
FS75R12KE3G
Infineon Technologies
IGBT Modules 1200V 75A 3-PHASE
Data Sheet
0-5: $99.79
5-10: $89.82