Product Summary

The F4-75R12KS4 is an IGBT-Module.

Parametrics

F4-75R12KS4 absolute maximum ratings: (1)collector emitter voltage: 1200V; (2)DC collector current: 75A; (3)repetitive peak collector current: 150A; (4)total power dissipation: 500W; (5)gate emitter peak voltage: ±20V.

Features

F4-75R12KS4 features: (1)forward voltage: 2.00V; (2)peak reverse recovery current: 43A; (3)recovered charge: 4.50μC; (4)reverse recovery energy: 1.70 mJ; (5)thermal resistance, junction to case: 0.55K/W.

Diagrams

F4-75R12KS4 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
F4-75R12KS4
F4-75R12KS4

Infineon Technologies

IGBT Modules N-CH 1.2KV 100A

Data Sheet

0-6: $76.21
6-10: $68.58
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
F4-75R06W1E3
F4-75R06W1E3

Infineon Technologies

IGBT Modules N-CH 600V 100A

Data Sheet

0-1: $21.52
1-10: $19.36
F4-75R12KS4
F4-75R12KS4

Infineon Technologies

IGBT Modules N-CH 1.2KV 100A

Data Sheet

0-6: $76.21
6-10: $68.58
F4-75R12MS4
F4-75R12MS4

Infineon Technologies

IGBT Modules N-CH 1.2KV 100A

Data Sheet

0-5: $75.38
5-10: $67.84